transistor characteristics
英 [trænˈzɪstə(r) ˌkærɪktəˈrɪstɪks]
美 [trænˈzɪstər ˌkɛrəktəˈrɪstɪks]
网络 晶体管特性; 电晶体特性
双语例句
- Analysis of Capacitance Coupled Three Junction Single Electron Transistor Characteristics
电容耦合三结单电子晶体管特性分析 - Temperature Effect of MOS Power Transistor Characteristics
MOS功率晶体管特性的温度效应 - The PHEMT ( pseudomorphic high electron mobility transistor) device has outstanding high-frequency characteristics, power characteristics and low-noise characteristics, and it is one of the most competitions in the field of microwave and millimeter-wave monolithic integrated circuits.
PHEMT（赝匹配型高电子迁移率管）器件具有优异的高频特性、功率特性和低噪声特性，使之成为微波/毫米波单片集成电路领域中最有竞争力的有源器件之一。 - Improvement of Electro Mechanical Single Electron Transistor Semi-classical Model and Investigation of Its Transport Characteristics
机电单电子晶体管半经典模型的改进和输运特性的研究 - Based on the bulk driven PMOS transistor, a low voltage CMOS cascade current mirror ( BDCCM) is presented, then the input/ output impedance and frequency characteristics are discussed.
基于衬底驱动PMOS晶体管设计了低压PMOS衬底驱动CMOS共源共栅电流镜电路（BDCCM），并讨论分析了其输入阻抗、输出阻抗和频率特性。 - As the basic unit of micro electronic integrated circuit, Field Effect Transistor ( FET) possesses the characteristics of well-developed fabrication process and simple structure.
场效应晶体管作为微电子领域集成芯片的基本组成单元，具有制作工艺成熟，构造简单等特点。 - It suggests the significance of intramolecular charge transfer on the transistor characteristics.
这显示了在电晶体中有显著的分子内电子转移。 - An analysis of the characteristics of IGBT is made in this paper A wide base, low gain PNP, transistor is contained in IGBT, so the ambipolar transport theory is used to analyse the characteristics of IGBT.
对绝缘栅双极晶体管（IGBT）的工作特性进行了理论分析。由于IGBT所含的PNP晶体管是宽基区、低增益的，因此在分析其工作特性时用了双极传输理论。 - It is shown that the new transistor has more uniform characteristics of current gain at low current level, and an excellent low-frequency noise figure, so that it is a promising low noise device at low frequency with simpler processes.
实验结果表明，漂洗发射极晶体管的小电流增益均匀性好，具有良好的低频噪声特性，是一种工艺比较简化，性能较好的低频低噪声器件。 - A-Si: ( H, O) Was Deposited on SiO2 for Improving the Transistor Characteristics
一种无定形SiO2上沉积含氢的非晶硅氧改善硅平面管特性的方法